![]() A free-standing film made by lifting the film off its growth substrate recovered its bulk T c and bulk saturated magnetic moment. The observed small change of ferromagnetic properties in SRO films has been mostly explained simply in terms of lattice mismatch. While many previous studies have focused on (100) c-oriented SRO films, the in-plane magnetization of thin films on top of STO (001) substrates was smaller than out-of-plane magnetization and T c was smaller than that of bulk SRO. A peculiar orthorhombic-to-tetragonal structural transition with variation of the Ru-O-Ru bond angle was observed depending on the thickness and temperature of the SRO film on STO (001) substrate but this structural transition temperature was not associated with the ferromagnetic transition temperature. While transport properties such as residual resistivity ratio (varying order of magnitude) are very sensitive to a tiny amount of Ru vacancy in SRO thin films grown on (100) SrTiO 3 (STO) substrates, the ferromagnetic properties are rather immune to this tiny amount of Ru vacancy. Aside from these two factors, the ferromagnetic properties of SRO, especially the ferromagnetic transition temperature, T c, have been known to be rather robust. In addition to thickness being smaller than the critical thickness ( t > 10 unit cells). Film thickness, the amount of lattice mismatch, oxygen vacancy, and Ru vacancy are found to change its physical properties.įundamental thickness limit of itinerant ferromagnetism was observed. Due to its low resistivity and good chemical stability, SrRuO 3 (SRO) is frequently used as metallic electrodes in epitaxial perovskite-heterostructure capacitors. ![]()
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